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| DTC123JE / DTC123JUA / DTC123JKA / DTC123JSA Transistor Digital transistors (built-in resistors) DTC123JE / DTC123JUA / DTC123JKA / DTC123JSA !Features 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see the equivalent circuit). 2) The bias resistors consist of thinfilm resistors with complete isolation to allow negative biasing of the input. They also have the advantage of almost completely eliminating parasitic effects. 3) Only the on / off conditions need to be set for operation, making device design easy. !External dimensions (Units : mm) DTC123JE 0.2-0.05 (1) (2) +0.1 1.60.2 1.00.1 0.5 0.5 0.70.1 +0.1 0.2-0.05 0.80.1 1.60.2 0.550.1 0~0.1 (3) +0.1 0.3 -0.05 0.1Min. 0.150.05 ROHM : EMT3 Abbreviated symbol : E42 (1) GND (2) IN (3) OUT DTC123JUA 2.00.2 1.30.1 0.65 0.65 (1) (2) 1.250.1 2.10.1 0.90.1 0.2 0.70.1 0~0.1 (3) 0.3+0.1 -0 0.150.05 0.1~0.4 !Structure NPN digital transistor (Built-in resistor type) ROHM : UMT3 EIAJ : SC-70 All terminals have same dimensions Abbreviated symbol : E42 (1) GND (2) IN (3) OUT DTC123JKA 2.90.2 1.90.2 0.95 0.95 1.1+0.2 -0.1 0.80.1 2.80.2 (3) 0.4 +0.1 +0.1 0.15 -0.06 0.3~0.6 R1 IN R2 OUT -0.05 1.6+0.2 -0.1 !Equivalent circuit (1) (2) 0~0.1 ROHM : SMT3 EIAJ : SC-59 GND All terminals have same dimensions Abbreviated symbol : E42 (1) GND (2) IN (3) OUT DTC123JSA IN GND OUT 30.2 40.2 20.2 (15Min.) 0.45+0.15 -0.05 3Min. 5 2.5 +0.4 -0.1 0.5 +0.15 0.45 -0.05 ROHM : SPT EIAJ : SC-72 (1) (2) (3) (1) GND (2) OUT (3) IN DTC123JE / DTC123JUA / DTC123JKA / DTC123JSA Transistor !Absolute maximum ratings (Ta=25C) Parameter Symbol E VCC VIN IO Limits(DTC123J UA 50 -5~+12 100 100 150 200 150 -55~+150 300 mW C C KA ) SA V V mA Part No. DTC123JE DTC123JUA DTC123JKA DTC123JSA - !Packaging specifications Package EMT3 UMT3 SMT3 SPT Unit Packaging type Code Basic ordering unit (pieces) Taping TL 3000 Taping T106 3000 - Taping T146 3000 - Taping TP 5000 - Supply voltage Input voltage Output current Power dissipation Junction temperature Storage temperature IC(Max.) Pd Tj Tstg !Electrical characteristics (Ta=25C) Parameter Symbol VI(off) VI(on) VO(on) II IO(off) GI R1 R2/R1 fT Min. 1.1 80 1.54 17 Typ. 0.1 2.2 21 250 Max. 0.5 0.3 3.6 0.5 2.86 26 V V mA A k MHz Unit Conditions VCC=5V, IO=100A VO=0.3V, IO=5mA IO/II=5mA/0.25mA VI=5V VCC=50V, VI=0V VO=5V, IO=10mA VCE=10V, IE=-5mA, f=100MHz Input voltage Output voltage Input current Output current DC current gain Input resistance Resistance ratio Transition frequency *Transition frequency of the device * !Electrical characteristics curves 100 50 VO=0.3V OUTPUT CURRENT : Io (A) 10m 5m 2m VCC=5V 1k 500 DC CURRENT GAIN : GI VO=5V Ta=100C 25C -40C INPUT VOLTAGE : VI (on) (V) 20 10 5 2 1 500m 200m 100m 100 200 500 1m 2m 5m 10m 20m 50m 100m Ta=-40C 25C 100C 1m 500 200 100 50 20 10 5 2 1 0 0.5 1.0 1.5 2.0 2.5 3.0 INPUT VOLTAGE : VI (off) (V) Ta=100C 25C -40C 200 100 50 20 10 5 2 1 100 200 500 1m 2m 5m 10m 20m 50m 100m OUTPUT CURRENT : IO (A) OUTPUT CURRENT : IO (A) Fig.1 Input voltage vs. output current (ON characteristics) 1 500m OUTPUT VOLTAGE : VO (on) (V) Fig.2 Output current vs. input voltage (OFF characteristics) Fig.3 DC current gain vs. output current lO/lI=20 200m 100m 50m 20m 10m 5m 2m 1m 100 200 500 1m Ta=100C 25C -40C 2m 5m 10m 20m 50m 100m OUTPUT CURRENT : IO (A) Fig.4 Output voltage vs. output current |
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